PMN30XP
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN30XP
Marking Code: 3A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034
Ohm
Package:
TSOP6
PMN30XP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN30XP
Datasheet (PDF)
..1. Size:731K nxp
pmn30xp.pdf
PMN30XP20 V, P-channel Trench MOSFET23 February 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 m
0.1. Size:255K nxp
pmn30xpe.pdf
PMN30XPE20 V, P-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HB
9.1. Size:726K nxp
pmn30une.pdf
PMN30UNE20 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa
9.2. Size:258K nxp
pmn30enea.pdf
PMN30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele
9.3. Size:749K nxp
pmn30un.pdf
PMN30UN30 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.