All MOSFET. PMN48XPA Datasheet

 

PMN48XPA Datasheet and Replacement


   Type Designator: PMN48XPA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6
 

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PMN48XPA Datasheet (PDF)

 ..1. Size:261K  nxp
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PMN48XPA

PMN48XPA20 V, P-channel Trench MOSFET17 May 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified3. A

 7.1. Size:1109K  nxp
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PMN48XPA

PMN48XP20 V, 4.1 A P-channel Trench MOSFETRev. 1 21 April 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching1.

Datasheet: PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , 2SK3918 , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA .

History: HSS2319 | IPB34CN10N | FQD2N50TF | NCE65T260K | FXN9N90P | P2610BT | DMN3035LWN

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