All MOSFET. PMN48XPA Datasheet

 

PMN48XPA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMN48XPA
   Marking Code: BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.7 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6

 PMN48XPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMN48XPA Datasheet (PDF)

 ..1. Size:261K  nxp
 pmn48xpa.pdf

PMN48XPA PMN48XPA

PMN48XPA20 V, P-channel Trench MOSFET17 May 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified3. A

 7.1. Size:1109K  nxp
 pmn48xp.pdf

PMN48XPA PMN48XPA

PMN48XP20 V, 4.1 A P-channel Trench MOSFETRev. 1 21 April 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching1.

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