All MOSFET. PMN55ENE Datasheet

 

PMN55ENE Datasheet and Replacement


   Type Designator: PMN55ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP6
 

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PMN55ENE Datasheet (PDF)

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PMN55ENE

PMN55ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch

 0.1. Size:265K  nxp
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PMN55ENE

PMN55ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E

Datasheet: PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , AO4468 , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA , PMPB10EN , PMPB10UP , PMPB10XNEA .

History: IXKR40N60C | IPI086N10N3G | IPW60R045CPA

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