PMN55ENE Specs and Replacement
Type Designator: PMN55ENE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TSOP6
PMN55ENE substitution
- MOSFET ⓘ Cross-Reference Search
PMN55ENE datasheet
pmn55ene.pdf
PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch... See More ⇒
pmn55enea.pdf
PMN55ENEA 60 V, N-channel Trench MOSFET 26 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E... See More ⇒
Detailed specifications: PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE, PMN52XP, AOD4184A, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN, PMPB10UP, PMPB10XNEA
Keywords - PMN55ENE MOSFET specs
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