PMPB100ENE MOSFET Datasheet: N-Ch, 30V, 3.9A. Full specification with pinout and replacement list

PMPB100ENE Specs and Replacement

Type Designator: PMPB100ENE

Marking Code: 3T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 3.5 nC

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT1220

PMPB100ENE substitution

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PMPB100ENE datasheet

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