All MOSFET. PMPB100ENE Datasheet

 

PMPB100ENE Datasheet and Replacement


   Type Designator: PMPB100ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOT1220
 

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PMPB100ENE Datasheet (PDF)

 ..1. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB100ENE

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

 7.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB100ENE

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 8.1. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB100ENE

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 8.2. Size:314K  nxp
 pmpb10up.pdf pdf_icon

PMPB100ENE

PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

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Datasheet: PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , IRFP064N , PMPB100XPEA , PMPB10EN , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA .

History: IRL2505SPBF | DMP6185SE

Keywords - PMPB100ENE MOSFET datasheet

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