PMPB100ENE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB100ENE
Marking Code: 3T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3.5 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT1220
PMPB100ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB100ENE Datasheet (PDF)
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
