PMPB100ENE Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PMPB100ENE
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 34 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.072 Ohm
Тип корпуса: SOT1220
Аналог (замена) для PMPB100ENE
PMPB100ENE Datasheet (PDF)
pmpb100ene.pdf

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic
pmpb100xpea.pdf

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S
pmpb10xne.pdf

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult
pmpb10up.pdf

PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
Другие MOSFET... PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , IRFP064N , PMPB100XPEA , PMPB10EN , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA .
History: 2SJ229 | BL3N90-D | SWSA1N60DC | JCS4N70F | 2SK4063LS
History: 2SJ229 | BL3N90-D | SWSA1N60DC | JCS4N70F | 2SK4063LS



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