PMPB25ENE Datasheet. Specs and Replacement
Type Designator: PMPB25ENE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 113 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT1220
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PMPB25ENE datasheet
..1. Size:294K nxp
pmpb25ene.pdf 
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pmpb20xnea.pdf
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pmpb20xpea.pdf
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pmpb29xpea.pdf
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pmpb23xnea.pdf
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pmpb29xnea.pdf
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pmpb24ep.pdf
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pmpb20en.pdf
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pmpb20xpe.pdf
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pmpb20un.pdf
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pmpb29xne.pdf
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pmpb29xpe.pdf
PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra... See More ⇒
Detailed specifications: PMPB13XNEA, PMPB14XP, PMPB15XPA, PMPB16EP, PMPB20XNEA, PMPB20XPEA, PMPB23XNEA, PMPB24EP, IRF640N, PMPB27EPA, PMPB29XNEA, PMPB29XPEA, PMPB30XPE, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA
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