PMPB25ENE Spec and Replacement
Type Designator: PMPB25ENE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 7.2
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 113
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
SOT1220
PMPB25ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB25ENE Specs
..1. Size:294K nxp
pmpb25ene.pdf 
PMPB25ENE 30 V, N-channel Trench MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl... See More ⇒
9.1. Size:247K nxp
pmpb23xne.pdf
PMPB23XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.1 kV ESD protection Small and leadless ult... See More ⇒
9.2. Size:732K nxp
pmpb20xnea.pdf
PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ... See More ⇒
9.3. Size:295K nxp
pmpb20xpea.pdf
PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒
9.4. Size:291K nxp
pmpb27epa.pdf
PMPB27EPA 30 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection ... See More ⇒
9.5. Size:278K nxp
pmpb29xpea.pdf
PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒
9.6. Size:295K nxp
pmpb23xnea.pdf
PMPB23XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒
9.7. Size:288K nxp
pmpb29xnea.pdf
PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank... See More ⇒
9.8. Size:301K nxp
pmpb24ep.pdf
PMPB24EP 30 V, P-channel Trench MOSFET 22 October 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks f... See More ⇒
9.9. Size:235K nxp
pmpb215enea.pdf
PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plast... See More ⇒
9.10. Size:268K nxp
pmpb20en.pdf
PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t... See More ⇒
9.11. Size:246K nxp
pmpb27ep.pdf
PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ... See More ⇒
9.12. Size:250K nxp
pmpb20xpe.pdf
PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr... See More ⇒
9.13. Size:227K nxp
pmpb20un.pdf
PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ... See More ⇒
9.14. Size:258K nxp
pmpb29xne.pdf
PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack... See More ⇒
9.15. Size:233K nxp
pmpb29xpe.pdf
PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra... See More ⇒
Detailed specifications: PMPB13XNEA
, PMPB14XP
, PMPB15XPA
, PMPB16EP
, PMPB20XNEA
, PMPB20XPEA
, PMPB23XNEA
, PMPB24EP
, IRF640N
, PMPB27EPA
, PMPB29XNEA
, PMPB29XPEA
, PMPB30XPE
, PMPB43XPEA
, PMPB48EPA
, PMPB50ENE
, PMPB55ENEA
.
History: NDT3055
Keywords - PMPB25ENE MOSFET specs
PMPB25ENE cross reference
PMPB25ENE equivalent finder
PMPB25ENE lookup
PMPB25ENE substitution
PMPB25ENE replacement
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