PMPB30XPE Datasheet. Specs and Replacement
Type Designator: PMPB30XPE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 184 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SOT1220
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PMPB30XPE substitution
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PMPB30XPE datasheet
pmpb30xpe.pdf
PMPB30XPE 20 V, P-channel Trench MOSFET 26 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl... See More ⇒
pmpb33xn.pdf
PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Very fast switching S... See More ⇒
pmpb33xp.pdf
PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless u... See More ⇒
Detailed specifications: PMPB20XNEA, PMPB20XPEA, PMPB23XNEA, PMPB24EP, PMPB25ENE, PMPB27EPA, PMPB29XNEA, PMPB29XPEA, IRF3710, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, PMT200EPE, PMT280ENEA
Keywords - PMPB30XPE MOSFET specs
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