All MOSFET. STP50N06LFI Datasheet

 

STP50N06LFI Datasheet and Replacement


   Type Designator: STP50N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: ISOWATT220
      - MOSFET Cross-Reference Search

 

STP50N06LFI Datasheet (PDF)

 5.1. Size:397K  st
 stp50n06l.pdf pdf_icon

STP50N06LFI

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

 5.2. Size:404K  st
 stp50n06l-fi.pdf pdf_icon

STP50N06LFI

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

 6.1. Size:201K  st
 stp50n06-.pdf pdf_icon

STP50N06LFI

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP50N06 60 V

 6.2. Size:396K  st
 stp50n06.pdf pdf_icon

STP50N06LFI

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06 60 V

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History: TK2P60D | IRFBG20

Keywords - STP50N06LFI MOSFET datasheet

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