PMPB8XN Spec and Replacement
Type Designator: PMPB8XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOT1220
PMPB8XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB8XN Specs
pmpb85enea.pdf
PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti... See More ⇒
Detailed specifications: PMPB29XNEA , PMPB29XPEA , PMPB30XPE , PMPB43XPEA , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , 8205A , PMT200EPE , PMT280ENEA , PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA .
Keywords - PMPB8XN MOSFET specs
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