PMPB8XN Datasheet. Specs and Replacement

Type Designator: PMPB8XN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOT1220

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PMPB8XN datasheet

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PMPB8XN

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PMPB8XN

PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti... See More ⇒

Detailed specifications: PMPB29XNEA, PMPB29XPEA, PMPB30XPE, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, 8205A, PMT200EPE, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.