PMV100ENEA Datasheet. Specs and Replacement

Type Designator: PMV100ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT23

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PMV100ENEA datasheet

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 pmv100enea.pdf pdf_icon

PMV100ENEA

PMV100ENEA 30 V, N-channel Trench MOSFET 17 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc... See More ⇒

 8.1. Size:265K  nxp
 pmv100xpea.pdf pdf_icon

PMV100ENEA

PMV100XPEA 20 V, P-channel Trench MOSFET 15 June 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar... See More ⇒

Detailed specifications: PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, PMT200EPE, PMT280ENEA, PMT560ENEA, IRF9540, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA

Keywords - PMV100ENEA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.