PMV15UNEA Datasheet. Specs and Replacement
Type Designator: PMV15UNEA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 124 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOT23
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PMV15UNEA substitution
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PMV15UNEA datasheet
pmv15enea.pdf
PMV15ENEA 30 V, N-channel Trench MOSFET 16 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒
Detailed specifications: PMPB55XNEA, PMPB8XN, PMT200EPE, PMT280ENEA, PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, STP75NF75, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA
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