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PMV15UNEA Spec and Replacement


   Type Designator: PMV15UNEA
   Marking Code: *GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOT23

 PMV15UNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV15UNEA Specs

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PMV15UNEA

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PMV15UNEA

PMV15ENEA 30 V, N-channel Trench MOSFET 16 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

Detailed specifications: PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , STP75NF75 , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA .

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