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PMV20XNEA Spec and Replacement


   Type Designator: PMV20XNEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23

 PMV20XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV20XNEA Specs

 ..1. Size:719K  nxp
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PMV20XNEA

PMV20XNEA 20 V, N-channel Trench MOSFET 9 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar... See More ⇒

 6.1. Size:250K  nxp
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PMV20XNEA

PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12... See More ⇒

 7.1. Size:332K  tysemi
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PMV20XNEA

Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET t... See More ⇒

 9.1. Size:308K  nxp
 pmv20en.pdf pdf_icon

PMV20XNEA

PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat... See More ⇒

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Detailed specifications: PMT280ENEA , PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , IRF4905 , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA .

History: JMPF16N65BJ | HGB200N10SL

Keywords - PMV20XNEA MOSFET specs

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