All MOSFET. PMV20XNEA Datasheet

 

PMV20XNEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV20XNEA
   Marking Code: DT*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.9 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23

 PMV20XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV20XNEA Datasheet (PDF)

 ..1. Size:719K  nxp
pmv20xnea.pdf

PMV20XNEA
PMV20XNEA

PMV20XNEA20 V, N-channel Trench MOSFET9 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar

 6.1. Size:250K  nxp
pmv20xne.pdf

PMV20XNEA
PMV20XNEA

PMV20XNE30 V, N-channel Trench MOSFET10 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12

 7.1. Size:332K  tysemi
pmv20xn.pdf

PMV20XNEA
PMV20XNEA

Product specificationPMV20XN30 V, 4.8 A N-channel Trench MOSFETRev. 1 5 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

 9.1. Size:308K  nxp
pmv20en.pdf

PMV20XNEA
PMV20XNEA

PMV20EN30 V, N-channel Trench MOSFET5 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat

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