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PMV25ENEA Spec and Replacement


   Type Designator: PMV25ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT23

 PMV25ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV25ENEA Specs

 ..1. Size:371K  nxp
 pmv25enea.pdf pdf_icon

PMV25ENEA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:244K  nxp
 pmv250epea.pdf pdf_icon

PMV25ENEA

PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected ... See More ⇒

Detailed specifications: PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , AO3401 , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE .

Keywords - PMV25ENEA MOSFET specs

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