PMV25ENEA Datasheet and Replacement
Type Designator: PMV25ENEA
Marking Code: DU*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12.6 nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT23
PMV25ENEA substitution
PMV25ENEA Datasheet (PDF)
pmv25enea.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmv250epea.pdf

PMV250EPEA40 V, P-channel Trench MOSFET20 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected
Datasheet: PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , AO3400 , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE .
History: BUK7Y1R7-40H | PJU5NA80 | 10N65KG-TF1-T | RJK0365DPA | AON6226 | S10H08RN | AFP3403
Keywords - PMV25ENEA MOSFET datasheet
PMV25ENEA cross reference
PMV25ENEA equivalent finder
PMV25ENEA lookup
PMV25ENEA substitution
PMV25ENEA replacement
History: BUK7Y1R7-40H | PJU5NA80 | 10N65KG-TF1-T | RJK0365DPA | AON6226 | S10H08RN | AFP3403



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