PMV25ENEA Datasheet. Specs and Replacement

Type Designator: PMV25ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOT23

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PMV25ENEA datasheet

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PMV25ENEA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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PMV25ENEA

PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected ... See More ⇒

Detailed specifications: PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, AO3401, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE

Keywords - PMV25ENEA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.