PMV27UPEA Datasheet. Specs and Replacement

Type Designator: PMV27UPEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT23

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PMV27UPEA datasheet

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PMV27UPEA

PMV27UPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dis... See More ⇒

 6.1. Size:440K  nxp
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PMV27UPEA

PMV27UPE 20 V, P-channel Trench MOSFET 15 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat... See More ⇒

Detailed specifications: PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, K3569, PMV280ENEA, PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA

Keywords - PMV27UPEA MOSFET specs

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