All MOSFET. STP53N06 Datasheet

 

STP53N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP53N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220

 STP53N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP53N06 Datasheet (PDF)

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stp53n06.pdf

STP53N06
STP53N06

 7.1. Size:306K  st
stp53n05.pdf

STP53N06
STP53N06

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stp53n08.pdf

STP53N06
STP53N06

STP53N08N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP53N08 80 V

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2stp535fp.pdf

STP53N06
STP53N06

2STP535FPNPN power Darlington transistorFeatures Monolithic Darlington transistor with integrated antiparallel collector-emitter diode Very high DC current gainApplications3 Electronic ignition21 AC-DC motor controlTO-220FP Alternator regulatorDescriptionFigure 1. Internal schematic diagramThe 2STP535FP is a planar NPN power transistor in monolit

 9.2. Size:189K  inchange semiconductor
2stp535fp.pdf

STP53N06
STP53N06

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2STP535FPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator

Datasheet: STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , IRF640N , STP55N05L , STP55N05LFI , STP55N06L , STP55N06LFI , STP5N25L , STP5N25LFI , STP5N30 , STP5N30FI .

 

 
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