STP53N06 Datasheet and Replacement
Type Designator: STP53N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220
STP53N06 substitution
STP53N06 Datasheet (PDF)
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2STP535FPNPN power Darlington transistorFeatures Monolithic Darlington transistor with integrated antiparallel collector-emitter diode Very high DC current gainApplications3 Electronic ignition21 AC-DC motor controlTO-220FP Alternator regulatorDescriptionFigure 1. Internal schematic diagramThe 2STP535FP is a planar NPN power transistor in monolit
Datasheet: STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , IRF630 , STP55N05L , STP55N05LFI , STP55N06L , STP55N06LFI , STP5N25L , STP5N25LFI , STP5N30 , STP5N30FI .
History: HYG035N10NS2P | TA17650 | FQP19N20CTSTU | STP55N05LFI | HGP320N20S | TMP830 | GSMBSS138
Keywords - STP53N06 MOSFET datasheet
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History: HYG035N10NS2P | TA17650 | FQP19N20CTSTU | STP55N05LFI | HGP320N20S | TMP830 | GSMBSS138
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