PMV30XPA Datasheet. Specs and Replacement

Type Designator: PMV30XPA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT23

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PMV30XPA datasheet

 ..1. Size:280K  nxp
pmv30xpa.pdf pdf_icon

PMV30XPA

PMV30XPA 20 V, P-channel Trench MOSFET 28 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology Ve... See More ⇒

 7.1. Size:716K  nxp
pmv30xpea.pdf pdf_icon

PMV30XPA

PMV30XPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot =... See More ⇒

 8.1. Size:311K  tysemi
pmv30xn.pdf pdf_icon

PMV30XPA

Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET t... See More ⇒

 9.1. Size:238K  philips
pmv30un.pdf pdf_icon

PMV30XPA

PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed switches. 1.4 Qui... See More ⇒

Detailed specifications: PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA, PMV30ENEA, K4145, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA, PMV48XPA2, PMV52ENEA, PMV55ENEA

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