Справочник MOSFET. PMV30XPA

 

PMV30XPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMV30XPA
   Маркировка: *HH
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.61 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.9 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 124 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для PMV30XPA

 

 

PMV30XPA Datasheet (PDF)

 ..1. Size:280K  nxp
pmv30xpa.pdf

PMV30XPA
PMV30XPA

PMV30XPA20 V, P-channel Trench MOSFET28 April 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology Ve

 7.1. Size:716K  nxp
pmv30xpea.pdf

PMV30XPA
PMV30XPA

PMV30XPEA20 V, P-channel Trench MOSFET30 October 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot =

 8.1. Size:311K  tysemi
pmv30xn.pdf

PMV30XPA
PMV30XPA

Product specificationPMV30XN20 V, 3.2 A N-channel Trench MOSFETRev. 1 22 June 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

 9.1. Size:238K  philips
pmv30un.pdf

PMV30XPA
PMV30XPA

PMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed switches.1.4 Qui

 9.2. Size:254K  nxp
pmv30enea.pdf

PMV30XPA
PMV30XPA

PMV30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 9.3. Size:265K  nxp
pmv30un2.pdf

PMV30XPA
PMV30XPA

PMV30UN220 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

 9.4. Size:107K  tysemi
pmv30un.pdf

PMV30XPA
PMV30XPA

Product specificationPMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed swi

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