PMV37ENEA Datasheet. Specs and Replacement
Type Designator: PMV37ENEA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: SOT23
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PMV37ENEA substitution
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PMV37ENEA datasheet
pmv37enea.pdf
PMV37ENEA 60 V, N-channel Trench MOSFET 21 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒
pmv37en2.pdf
PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa... See More ⇒
pmv37en.pdf
Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET te... See More ⇒
Detailed specifications: PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, 12N60, PMV42ENE, PMV450ENEA, PMV48XPA2, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE
Keywords - PMV37ENEA MOSFET specs
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