All MOSFET. PMV52ENEA Datasheet

 

PMV52ENEA Datasheet and Replacement


   Type Designator: PMV52ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23
 

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PMV52ENEA Datasheet (PDF)

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PMV52ENEA

PMV52ENEA30 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

Datasheet: PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , IRLZ44N , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

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