PMV52ENEA Datasheet. Specs and Replacement
Type Designator: PMV52ENEA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
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PMV52ENEA substitution
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PMV52ENEA datasheet
pmv52enea.pdf
PMV52ENEA 30 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒
Detailed specifications: PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA, PMV48XPA2, AON6380, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE, PMZ600UNEL, PMZ950UPEL
Keywords - PMV52ENEA MOSFET specs
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