All MOSFET. PMV52ENEA Datasheet

 

PMV52ENEA Datasheet and Replacement


   Type Designator: PMV52ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23
 

 PMV52ENEA substitution

   - MOSFET ⓘ Cross-Reference Search

 

PMV52ENEA Datasheet (PDF)

 ..1. Size:264K  nxp
 pmv52enea.pdf pdf_icon

PMV52ENEA

PMV52ENEA30 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

Datasheet: PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , AON7506 , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL .

History: PMV60ENEA

Keywords - PMV52ENEA MOSFET datasheet

 PMV52ENEA cross reference
 PMV52ENEA equivalent finder
 PMV52ENEA lookup
 PMV52ENEA substitution
 PMV52ENEA replacement

 

 
Back to Top

 


 
.