PMV52ENEA Datasheet and Replacement
Type Designator: PMV52ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
PMV52ENEA substitution
PMV52ENEA Datasheet (PDF)
pmv52enea.pdf

PMV52ENEA30 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele
Datasheet: PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , IRLZ44N , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL .
History: FDH5500 | P8008BD | SIB437EDKT | 2SK3480 | AP2308GEN | 2N60L-TM3-T | IPA105N15N3
Keywords - PMV52ENEA MOSFET datasheet
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History: FDH5500 | P8008BD | SIB437EDKT | 2SK3480 | AP2308GEN | 2N60L-TM3-T | IPA105N15N3



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