All MOSFET. PMV52ENEA Datasheet

 

PMV52ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV52ENEA
   Marking Code: HQ*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23

 PMV52ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV52ENEA Datasheet (PDF)

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 pmv52enea.pdf

PMV52ENEA PMV52ENEA

PMV52ENEA30 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

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History: AP4500GM

 

 
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