All MOSFET. PMV55ENEA Datasheet

 

PMV55ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV55ENEA
   Marking Code: DL*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.478 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.7 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

 PMV55ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV55ENEA Datasheet (PDF)

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 pmv55enea.pdf

PMV55ENEA PMV55ENEA

PMV55ENEA60 V, N-channel Trench MOSFET21 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disch

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