PMV55ENEA Datasheet. Specs and Replacement

Type Designator: PMV55ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.478 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

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PMV55ENEA datasheet

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PMV55ENEA

PMV55ENEA 60 V, N-channel Trench MOSFET 21 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disch... See More ⇒

Detailed specifications: PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA, PMV48XPA2, PMV52ENEA, IRF530, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE, PMZ600UNEL, PMZ950UPEL, PMZB600UNEL

Keywords - PMV55ENEA MOSFET specs

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