PMV90ENE Datasheet. Specs and Replacement

Type Designator: PMV90ENE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT23

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PMV90ENE datasheet

 ..1. Size:718K  nxp
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PMV90ENE

PMV90ENE 30 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha... See More ⇒

 7.1. Size:384K  tysemi
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PMV90ENE

Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSF... See More ⇒

Detailed specifications: PMV450ENEA, PMV48XPA2, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, IRFP450, PMZ600UNEL, PMZ950UPEL, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS

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