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PMV90ENE Spec and Replacement


   Type Designator: PMV90ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOT23

 PMV90ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV90ENE Specs

 ..1. Size:718K  nxp
 pmv90ene.pdf pdf_icon

PMV90ENE

PMV90ENE 30 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha... See More ⇒

 7.1. Size:384K  tysemi
 pmv90en.pdf pdf_icon

PMV90ENE

Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSF... See More ⇒

Detailed specifications: PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , IRFP450 , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS .

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