All MOSFET. PMZ600UNEL Datasheet

 

PMZ600UNEL Datasheet and Replacement


   Type Designator: PMZ600UNEL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 5.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT883
 

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PMZ600UNEL Datasheet (PDF)

 ..1. Size:719K  nxp
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PMZ600UNEL

PMZ600UNEL20 V, N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small SMD plastic package: 1.0 0.6 0.48

 5.1. Size:233K  nxp
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PMZ600UNEL

PMZ600UNE20 V, N-channel Trench MOSFET26 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 0.6

Datasheet: PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , IRFZ24N , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL .

History: MPSY65M170 | DMT31M6LPS | SIHFB9N65A | SUM110N08-07P | PMF250XN | QN3103M6N | IXFH120N15P

Keywords - PMZ600UNEL MOSFET datasheet

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