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PMZ600UNEL Spec and Replacement


   Type Designator: PMZ600UNEL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 5.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT883

 PMZ600UNEL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMZ600UNEL Specs

 ..1. Size:719K  nxp
pmz600unel.pdf pdf_icon

PMZ600UNEL

PMZ600UNEL 20 V, N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small SMD plastic package 1.0 0.6 0.48... See More ⇒

 5.1. Size:233K  nxp
pmz600une.pdf pdf_icon

PMZ600UNEL

PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package 1.0 0.6 ... See More ⇒

Detailed specifications: PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , TK10A60D , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL .

Keywords - PMZ600UNEL MOSFET specs

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