PMZ600UNEL Datasheet. Specs and Replacement

Type Designator: PMZ600UNEL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 5.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: SOT883

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PMZ600UNEL datasheet

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PMZ600UNEL

PMZ600UNEL 20 V, N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small SMD plastic package 1.0 0.6 0.48... See More ⇒

 5.1. Size:233K  nxp
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PMZ600UNEL

PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package 1.0 0.6 ... See More ⇒

Detailed specifications: PMV48XPA2, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE, TK10A60D, PMZ950UPEL, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL

Keywords - PMZ600UNEL MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.