PMZ950UPEL Datasheet. Specs and Replacement

Type Designator: PMZ950UPEL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT883

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PMZ950UPEL datasheet

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PMZ950UPEL

PMZ950UPEL 20 V, P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ultra... See More ⇒

 5.1. Size:230K  nxp
 pmz950upe.pdf pdf_icon

PMZ950UPEL

PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package ... See More ⇒

Detailed specifications: PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE, PMZ600UNEL, AO4407, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL

Keywords - PMZ950UPEL MOSFET specs

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