PMZ950UPEL MOSFET. Datasheet pdf. Equivalent
Type Designator: PMZ950UPEL
Marking Code: L2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.19 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 14 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT883
PMZ950UPEL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMZ950UPEL Datasheet (PDF)
pmz950upel.pdf
PMZ950UPEL20 V, P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ultra
pmz950upe.pdf
PMZ950UPE20 V, P-channel Trench MOSFET10 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package:
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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