All MOSFET. STP55N06L Datasheet

 

STP55N06L Datasheet and Replacement


   Type Designator: STP55N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 950 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO220
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STP55N06L Datasheet (PDF)

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STP55N06L

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 stp55n05l stp55n05lfi.pdf pdf_icon

STP55N06L

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 stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf pdf_icon

STP55N06L

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V

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STP55N06L

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V

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Keywords - STP55N06L MOSFET datasheet

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