PSMN2R0-60PSR Datasheet. Specs and Replacement

Type Designator: PSMN2R0-60PSR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 338 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 1210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TO-220AB

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PSMN2R0-60PSR datasheet

 ..1. Size:380K  nxp
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PSMN2R0-60PSR

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 2.1. Size:237K  philips
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PSMN2R0-60PSR

PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici... See More ⇒

 2.2. Size:742K  nxp
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PSMN2R0-60PSR

PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to... See More ⇒

 2.3. Size:261K  inchange semiconductor
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PSMN2R0-60PSR

isc N-Channel MOSFET Transistor PSMN2R0-60PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

Detailed specifications: PSMN1R6-30MLH, PSMN1R7-25YLD, PSMN1R7-40YLD, PSMN1R8-30MLH, PSMN1R9-40YSD, PSMN2R0-25MLD, PSMN2R0-25YLD, PSMN2R0-40YLD, AON7403, PSMN2R2-40YSD, PSMN2R5-40YLD, PSMN2R8-40YSD, PSMN3R2-40YLD, PSMN3R3-40MLH, PSMN3R3-40MSH, PSMN3R5-25MLD, PSMN3R5-40YSD

Keywords - PSMN2R0-60PSR MOSFET specs

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