All MOSFET. PSMN2R0-60PSR Datasheet

 

PSMN2R0-60PSR MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN2R0-60PSR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 338 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 137 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO-220AB

 PSMN2R0-60PSR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN2R0-60PSR Datasheet (PDF)

 ..1. Size:380K  nxp
psmn2r0-60psr.pdf

PSMN2R0-60PSR
PSMN2R0-60PSR

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 2.1. Size:237K  philips
psmn2r0-60ps.pdf

PSMN2R0-60PSR
PSMN2R0-60PSR

PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 2.2. Size:742K  nxp
psmn2r0-60ps.pdf

PSMN2R0-60PSR
PSMN2R0-60PSR

PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-2204 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due to

 2.3. Size:261K  inchange semiconductor
psmn2r0-60ps.pdf

PSMN2R0-60PSR
PSMN2R0-60PSR

isc N-Channel MOSFET Transistor PSMN2R0-60PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top