Справочник MOSFET. PSMN2R0-60PSR

 

PSMN2R0-60PSR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R0-60PSR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 338 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 137 nC
   trⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 1210 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для PSMN2R0-60PSR

 

 

PSMN2R0-60PSR Datasheet (PDF)

 ..1. Size:380K  nxp
psmn2r0-60psr.pdf

PSMN2R0-60PSR PSMN2R0-60PSR

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 2.1. Size:237K  philips
psmn2r0-60ps.pdf

PSMN2R0-60PSR PSMN2R0-60PSR

PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-220Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 2.2. Size:742K  nxp
psmn2r0-60ps.pdf

PSMN2R0-60PSR PSMN2R0-60PSR

PSMN2R0-60PSN-channel 60 V 2.2 m standard level MOSFET in TO-2204 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due to

 2.3. Size:261K  inchange semiconductor
psmn2r0-60ps.pdf

PSMN2R0-60PSR PSMN2R0-60PSR

isc N-Channel MOSFET Transistor PSMN2R0-60PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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