PSMN2R0-60PSR - аналоги и даташиты транзистора

 

PSMN2R0-60PSR - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PSMN2R0-60PSR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 338 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 1210 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для PSMN2R0-60PSR

 

PSMN2R0-60PSR Datasheet (PDF)

 ..1. Size:380K  nxp
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PSMN2R0-60PSR

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 2.1. Size:237K  philips
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PSMN2R0-60PSR

PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 2.2. Size:742K  nxp
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PSMN2R0-60PSR

PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 2.3. Size:261K  inchange semiconductor
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PSMN2R0-60PSR

isc N-Channel MOSFET Transistor PSMN2R0-60PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

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