All MOSFET. PSMN5R2-60YL Datasheet

 

PSMN5R2-60YL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN5R2-60YL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 78.4 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 391 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: SOT669

 PSMN5R2-60YL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN5R2-60YL Datasheet (PDF)

 ..1. Size:719K  nxp
psmn5r2-60yl.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R2-60YLN-channel 60 V, 5.2 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

 8.1. Size:251K  philips
psmn5r5-60ys.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R5-60YSN-channel LFPAK 60 V, 5.2 m standard level FETRev. 02 24 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 8.2. Size:238K  philips
psmn5r0-100es.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.3. Size:217K  philips
psmn5r6-100ps.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO220Rev. 03 2 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 8.4. Size:223K  philips
psmn5r8-40ys.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R8-40YSN-channel LFPAK 40 V 5.7 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.5. Size:231K  philips
psmn5r0-30yl.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 8.6. Size:224K  philips
psmn5r0-80ps.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 8.7. Size:245K  philips
psmn5r0-100ps.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-100PSN-channel 100 V 5 m standard level MOSFET in TO-220Rev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 8.8. Size:396K  philips
psmn5r8-30ll.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R8-30LLN-channel QFN3333 30 V 5.8 m logic level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency

 8.9. Size:208K  nxp
psmn5r6-100bs.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R6-100BSN-channel 100 V 5.6 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 8.10. Size:751K  nxp
psmn5r5-60ys.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R5-60YSN-channel LFPAK 60 V, 5.2 m standard level FETRev. 02 24 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 8.11. Size:741K  nxp
psmn5r6-60yl.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R6-60YLN-channel 60 V, 5.6 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

 8.12. Size:811K  nxp
psmn5r0-100es.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 3 26 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

 8.13. Size:734K  nxp
psmn5r6-100ps.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO22030 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due

 8.14. Size:724K  nxp
psmn5r3-25mld.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R3-25MLDN-channel 25 V, 5.3 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE

 8.15. Size:823K  nxp
psmn5r8-40ys.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R8-40YSN-channel LFPAK 40 V 5.7 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.16. Size:724K  nxp
psmn5r4-25yld.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R4-25YLDN-channel 25 V, 5.69 m logic level MOSFET in LFPAK56using NextPowerS3 Technology1 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

 8.17. Size:817K  nxp
psmn5r0-30yl.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 8.18. Size:216K  nxp
psmn5r0-100xs.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-100XSN-channel 100V 5 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.19. Size:726K  nxp
psmn5r0-80ps.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 8.20. Size:214K  nxp
psmn5r0-80bs.pdf

PSMN5R2-60YL PSMN5R2-60YL

PSMN5R0-80BSN-channel 80 V, 5.1 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 8.21. Size:356K  inchange semiconductor
psmn5r6-100bs.pdf

PSMN5R2-60YL PSMN5R2-60YL

isc N-Channel MOSFET Transistor PSMN5R6-100BSFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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