PSMN5R2-60YL datasheet, аналоги, основные параметры
Наименование производителя: PSMN5R2-60YL 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 195 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 44 ns
Cossⓘ - Выходная емкость: 391 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
Тип корпуса: SOT669
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Аналог (замена) для PSMN5R2-60YL
- подборⓘ MOSFET транзистора по параметрам
PSMN5R2-60YL даташит
..1. Size:719K nxp
psmn5r2-60yl.pdf 
PSMN5R2-60YL N-channel 60 V, 5.2 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and
8.1. Size:251K philips
psmn5r5-60ys.pdf 
PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 m standard level FET Rev. 02 24 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO
8.2. Size:238K philips
psmn5r0-100es.pdf 
PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
8.3. Size:217K philips
psmn5r6-100ps.pdf 
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
8.4. Size:223K philips
psmn5r8-40ys.pdf 
PSMN5R8-40YS N-channel LFPAK 40 V 5.7 m standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.5. Size:231K philips
psmn5r0-30yl.pdf 
PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
8.6. Size:224K philips
psmn5r0-80ps.pdf 
PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
8.7. Size:245K philips
psmn5r0-100ps.pdf 
PSMN5R0-100PS N-channel 100 V 5 m standard level MOSFET in TO-220 Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie
8.8. Size:396K philips
psmn5r8-30ll.pdf 
PSMN5R8-30LL N-channel QFN3333 30 V 5.8 m logic level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency
8.9. Size:208K nxp
psmn5r6-100bs.pdf 
PSMN5R6-100BS N-channel 100 V 5.6 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
8.10. Size:751K nxp
psmn5r5-60ys.pdf 
PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 m standard level FET Rev. 02 24 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO
8.11. Size:741K nxp
psmn5r6-60yl.pdf 
PSMN5R6-60YL N-channel 60 V, 5.6 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and
8.12. Size:811K nxp
psmn5r0-100es.pdf 
PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 3 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ef
8.13. Size:734K nxp
psmn5r6-100ps.pdf 
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
8.14. Size:724K nxp
psmn5r3-25mld.pdf 
PSMN5R3-25MLD N-channel 25 V, 5.3 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE
8.15. Size:823K nxp
psmn5r8-40ys.pdf 
PSMN5R8-40YS N-channel LFPAK 40 V 5.7 m standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.16. Size:724K nxp
psmn5r4-25yld.pdf 
PSMN5R4-25YLD N-channel 25 V, 5.69 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 1 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF
8.17. Size:817K nxp
psmn5r0-30yl.pdf 
PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
8.18. Size:216K nxp
psmn5r0-100xs.pdf 
PSMN5R0-100XS N-channel 100V 5 m standard level MOSFET in TO220F (SOT186A) Rev. 1 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
8.19. Size:726K nxp
psmn5r0-80ps.pdf 
PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
8.20. Size:214K nxp
psmn5r0-80bs.pdf 
PSMN5R0-80BS N-channel 80 V, 5.1 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
8.21. Size:356K inchange semiconductor
psmn5r6-100bs.pdf 
isc N-Channel MOSFET Transistor PSMN5R6-100BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
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