PSMN8R5-40MSD Specs and Replacement
Type Designator: PSMN8R5-40MSD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 409 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOT1210
PSMN8R5-40MSD substitution
- MOSFET ⓘ Cross-Reference Search
PSMN8R5-40MSD datasheet
psmn8r5-40msd.pdf
PSMN8R5-40MSD N-channel 40 V, 8.5 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 10 February 2020 Product data sheet 1. General description 60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching ... See More ⇒
psmn8r5-60ys.pdf
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM... See More ⇒
psmn8r5-100esf.pdf
PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency ... See More ⇒
psmn8r5-100xs.pdf
PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi... See More ⇒
Detailed specifications: PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, IRF640N, PSMN8R7-100YSF, PSMNR60-25YLH, PSMNR70-30YLH, PSMNR70-40SSH, PSMNR90-40SSH, PSMNR90-40YLH, FDMS007N08LC, FDMS2D4N03S
Keywords - PSMN8R5-40MSD MOSFET specs
PSMN8R5-40MSD cross reference
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