All MOSFET. PSMN8R5-40MSD Datasheet

 

PSMN8R5-40MSD Datasheet and Replacement


   Type Designator: PSMN8R5-40MSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 409 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOT1210
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PSMN8R5-40MSD Datasheet (PDF)

 ..1. Size:301K  nxp
psmn8r5-40msd.pdf pdf_icon

PSMN8R5-40MSD

PSMN8R5-40MSDN-channel 40 V, 8.5 m, standard level MOSFET in LFPAK33using NextPower-S3 technology10 February 2020 Product data sheet1. General description60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

 6.1. Size:241K  philips
psmn8r5-60ys.pdf pdf_icon

PSMN8R5-40MSD

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFETRev. 01 22 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 6.2. Size:250K  nxp
psmn8r5-100esf.pdf pdf_icon

PSMN8R5-40MSD

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 6.3. Size:228K  nxp
psmn8r5-100xs.pdf pdf_icon

PSMN8R5-40MSD

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQI10N20CTU | DH300N08I | SSM9585GP | RFP14N05 | CHM4301JGP | FDP5680 | MTN15N50F3

Keywords - PSMN8R5-40MSD MOSFET datasheet

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