PSMN8R5-40MSD. Аналоги и основные параметры
Наименование производителя: PSMN8R5-40MSD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 59 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 409 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: SOT1210
Аналог (замена) для PSMN8R5-40MSD
- подборⓘ MOSFET транзистора по параметрам
PSMN8R5-40MSD даташит
psmn8r5-40msd.pdf
PSMN8R5-40MSD N-channel 40 V, 8.5 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 10 February 2020 Product data sheet 1. General description 60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching
psmn8r5-60ys.pdf
PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
psmn8r5-100esf.pdf
PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf
PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi
Другие IGBT... PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, IRF640N, PSMN8R7-100YSF, PSMNR60-25YLH, PSMNR70-30YLH, PSMNR70-40SSH, PSMNR90-40SSH, PSMNR90-40YLH, FDMS007N08LC, FDMS2D4N03S
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor









