STP5N30FI MOSFET. Datasheet pdf. Equivalent
Type Designator: STP5N30FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: ISOWATT220
STP5N30FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP5N30FI Datasheet (PDF)
stp5n30-.pdf
STP5N30STP5N30FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP5N30 300 V
stp5n30.pdf
STP5N30STP5N30FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5N30 300 V
stp5n30l.pdf
STP5N30LSTP5N30LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5N30L 300 V
Datasheet: STP53N06 , STP55N05L , STP55N05LFI , STP55N06L , STP55N06LFI , STP5N25L , STP5N25LFI , STP5N30 , IRFB4115 , STP5N30L , STP5N30LFI , STP5N50 , STP5N50FI , STP5N60 , STP5N60FI , STP5N80 , STP5N80FI .
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