All MOSFET. FDN028N20 Datasheet

 

FDN028N20 Datasheet and Replacement


   Type Designator: FDN028N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SSOT-3
 

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FDN028N20 Datasheet (PDF)

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FDN028N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDMS86182 , FDMS86183 , FDMS86368-F085 , FDMS86369-F085 , FDMS86381-F085 , FDMS86581 , FDMS8D8N15C , FDMT80040DC , AO3400 , FDN304P2 , FDN5632N-F085 , FDP030N06B_F102 , FDP2710-F085 , FDPC3D5N025X9D , FDPC8014AS , FDPF7N50U_G , FDS6898AZ-F085 .

History: SGSP311 | STB11NM60N-1 | NTMFS5C456NL | OSS60R099HF | 2SK3121 | WMB140NV6LG4 | NP80N055KHE

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