FDN028N20 Specs and Replacement

Type Designator: FDN028N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SSOT-3

FDN028N20 substitution

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FDN028N20 datasheet

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FDN028N20

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDMS86182, FDMS86183, FDMS86368-F085, FDMS86369-F085, FDMS86381-F085, FDMS86581, FDMS8D8N15C, FDMT80040DC, AO3401, FDN304P2, FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G, FDS6898AZ-F085

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.