FDN028N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDN028N20
Marking Code: 28N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 6.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.3 nC
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 91 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SSOT-3
FDN028N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDN028N20 Datasheet (PDF)
..1. Size:699K onsemi
fdn028n20.pdf
fdn028n20.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ME2306D
