FDS86267P Specs and Replacement
Type Designator: FDS86267P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.255 Ohm
Package: SO-8
FDS86267P substitution
- MOSFET ⓘ Cross-Reference Search
FDS86267P datasheet
fds86267p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fds86252.pdf
April 2011 FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 m Features General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performa... See More ⇒
fds86242.pdf
August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren... See More ⇒
fds86240.pdf
June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre... See More ⇒
Detailed specifications: FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G, FDS6898AZ-F085, FDS8449-F085, 5N65, FDS8949-F085, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085
Keywords - FDS86267P MOSFET specs
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