FDS86267P Specs and Replacement

Type Designator: FDS86267P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.255 Ohm

Package: SO-8

FDS86267P substitution

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FDS86267P datasheet

 ..1. Size:396K  onsemi
fds86267p.pdf pdf_icon

FDS86267P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:258K  fairchild semi
fds86252.pdf pdf_icon

FDS86267P

April 2011 FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 m Features General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performa... See More ⇒

 8.2. Size:251K  fairchild semi
fds86242.pdf pdf_icon

FDS86267P

August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren... See More ⇒

 8.3. Size:238K  fairchild semi
fds86240.pdf pdf_icon

FDS86267P

June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre... See More ⇒

Detailed specifications: FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G, FDS6898AZ-F085, FDS8449-F085, 5N65, FDS8949-F085, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085

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