FDS86267P. Аналоги и основные параметры
Наименование производителя: FDS86267P
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2.5 ns
Cossⓘ - Выходная емкость: 54 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.255 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS86267P
- подборⓘ MOSFET транзистора по параметрам
FDS86267P даташит
fds86267p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds86252.pdf
April 2011 FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 m Features General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performa
fds86242.pdf
August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren
fds86240.pdf
June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre
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