FDU5N50NZTU MOSFET Datasheet: N-Ch, 500V, 4A. Full specification with pinout and replacement list

FDU5N50NZTU Specs and Replacement

Type Designator: FDU5N50NZTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 50 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: IPAK

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FDU5N50NZTU datasheet

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January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been espe... See More ⇒

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FDU5N60NZTU N-Channel UniFET II MOSFET 600 V, 4 A, 2 W UniFET II MOSFET is ON Semiconductor s high voltage www.onsemi.com MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior D switching performance and higher avalanche energy strength. In addition, int... See More ⇒

Detailed specifications: FDPF7N50U_G , FDS6898AZ-F085 , FDS8449-F085 , FDS86267P , FDS8949-F085 , FDS8958A-F085 , FDS8984-F085 , FDU3N50NZTU , CS150N03A8 , FDU5N60NZTU , FDWS86068-F085 , FDWS86368-F085 , FDWS86369-F085 , FDWS86380-F085 , FDWS9508L-F085 , FDWS9509L-F085 , FDWS9510L-F085 .