FDWS9510L-F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDWS9510L-F085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 811 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: POWER56
FDWS9510L-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDWS9510L-F085 Datasheet (PDF)
fdws9510l-f085.pdf
FDWS9510L-F085P-Channel Logic LevelPOWERTRENCH) MOSFET-40 V, -50 A, 13.5 mWFeatures Typ RDS(on) = 11 mW at VGS = -10 V; ID = -50 Awww.onsemi.com Typ Qg(tot) = 28 nC at VGS = -10 V; ID = -50 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI)V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified-40 V 13.5 mW @ -10 V -50 A These Devices are
fdws9508l-f085.pdf
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fdws9508l-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdws9509l-f085.pdf
www.onsemi.comFDWS9509L-F085 (Note1)P-Channel Logic Level Power Trench MOSFET- 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI)Applications Automotive Engi
fdws9520l-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2N6757
History: 2N6757
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918