All MOSFET. FDWS9510L-F085 Datasheet

 

FDWS9510L-F085 Datasheet and Replacement


   Type Designator: FDWS9510L-F085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 811 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: POWER56
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FDWS9510L-F085 Datasheet (PDF)

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FDWS9510L-F085

FDWS9510L-F085P-Channel Logic LevelPOWERTRENCH) MOSFET-40 V, -50 A, 13.5 mWFeatures Typ RDS(on) = 11 mW at VGS = -10 V; ID = -50 Awww.onsemi.com Typ Qg(tot) = 28 nC at VGS = -10 V; ID = -50 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI)V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified-40 V 13.5 mW @ -10 V -50 A These Devices are

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FDWS9510L-F085

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FDWS9510L-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

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FDWS9510L-F085

www.onsemi.comFDWS9509L-F085 (Note1)P-Channel Logic Level Power Trench MOSFET- 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI)Applications Automotive Engi

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History: STM9926 | HLML6401 | TPCS8204 | SFF23N60Z | SWN6N65K | PHD101NQ03LT | AP85T03GH-HF

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