FDWS9510L-F085. Аналоги и основные параметры

Наименование производителя: FDWS9510L-F085

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 811 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm

Тип корпуса: POWER56

Аналог (замена) для FDWS9510L-F085

- подборⓘ MOSFET транзистора по параметрам

 

FDWS9510L-F085 даташит

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FDWS9510L-F085

FDWS9510L-F085 P-Channel Logic Level POWERTRENCH) MOSFET -40 V, -50 A, 13.5 mW Features Typ RDS(on) = 11 mW at VGS = -10 V; ID = -50 A www.onsemi.com Typ Qg(tot) = 28 nC at VGS = -10 V; ID = -50 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified -40 V 13.5 mW @ -10 V -50 A These Devices are

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FDWS9510L-F085

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FDWS9510L-F085

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FDWS9510L-F085

www.onsemi.com FDWS9509L-F085 (Note1) P-Channel Logic Level Power Trench MOSFET - 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engi

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