All MOSFET. STP5N60 Datasheet

 

STP5N60 Datasheet and Replacement


   Type Designator: STP5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220
 

 STP5N60 substitution

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STP5N60 Datasheet (PDF)

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 stp5n60 stp5n60fi.pdf pdf_icon

STP5N60

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 std5n60m2 stp5n60m2 stu5n60m2.pdf pdf_icon

STP5N60

STD5N60M2, STP5N60M2, STU5N60M2N-channel 600 V, 1.26 typ., 3.5 A MDmesh II Plus low QgPower MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID3STD5N60M21STP5N60M2 650 V 1.4 3.5 ADPAKSTU5N60M2TAB Extremely low gate chargeTAB Lower RDS(on) x area vs previous generation3 3 Lo

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 std5n62k3 stf5n62k3 stp5n62k3 stu5n62k3.pdf pdf_icon

STP5N60

STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3DatasheetN-channel 620 V, 1.28 typ., 4.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesFeaturesTAB32 VDS RDS(on)max. IDOrder code Package1DPAK32 STD5N62K3 DPAK1TO-220FPSTF5N62K3 TO-220FP620 V 1.6 4.2 ATABSTP5N62K3 TO-220TABSTU5N62K3 IPAK32132IPAK 100% avalanche test

 8.2. Size:1172K  st
 stb5n62k3 std5n62k3 stf5n62k3 stp5n62k3 stu5n62k3.pdf pdf_icon

STP5N60

STB5N62K3, STD5N62K3, STF5N62K3STP5N62K3, STU5N62K3N-channel 620 V, 1.28 , 4.2 A SuperMESH3 Power MOSFETDPAK, DPAK,TO-220FP, TO-220 and IPAKFeaturesRDS(on) Order codes VDSS ID Pwmax.333221STB5N62K31170 WSTD5N62K3 DPAKTO-220TO-220FPSTF5N62K3 620 V

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Keywords - STP5N60 MOSFET datasheet

 STP5N60 cross reference
 STP5N60 equivalent finder
 STP5N60 lookup
 STP5N60 substitution
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