All MOSFET. FQB7P20TM_F085 Datasheet

 

FQB7P20TM_F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB7P20TM_F085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: D2PAK

 FQB7P20TM_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB7P20TM_F085 Datasheet (PDF)

 ..1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

 ..2. Size:819K  onsemi
 fqb7p20tm f085.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

 7.1. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2008QFETFQB7P20 / FQI7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

 7.2. Size:1324K  onsemi
 fqb7p20.pdf

FQB7P20TM_F085 FQB7P20TM_F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:660K  fairchild semi
 fqb7p06tm.pdf

FQB7P20TM_F085 FQB7P20TM_F085

May 2001TMQFETFQB7P06 / FQI7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially t

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOB292L

 

 
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