Справочник MOSFET. FQB7P20TM_F085

 

FQB7P20TM_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB7P20TM_F085
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.69 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для FQB7P20TM_F085

 

 

FQB7P20TM_F085 Datasheet (PDF)

 ..1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

 ..2. Size:819K  onsemi
 fqb7p20tm f085.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

 7.1. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf

FQB7P20TM_F085 FQB7P20TM_F085

November 2008QFETFQB7P20 / FQI7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

 7.2. Size:1324K  onsemi
 fqb7p20.pdf

FQB7P20TM_F085 FQB7P20TM_F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:660K  fairchild semi
 fqb7p06tm.pdf

FQB7P20TM_F085 FQB7P20TM_F085

May 2001TMQFETFQB7P06 / FQI7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially t

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