All MOSFET. NTB004N10G Datasheet

 

NTB004N10G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB004N10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 201 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 175 nC
   trⓘ - Rise Time: 64.5 nS
   Cossⓘ - Output Capacitance: 1170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: D2PAK

 NTB004N10G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB004N10G Datasheet (PDF)

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 ntb004n10g.pdf

NTB004N10G NTB004N10G

MOSFET Power,N-Channel100 V, 201 A, 4.2 mWNTB004N10GFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX Wide SOAV(BR)DSS RDS(ON) MAX (Note 1) These Devices are Pb-Free and are RoHS Compliant100 V 4.2 mW @ 10 V 201 AApplications Hot Swap in 48 V SystemsN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)Parameter Sy

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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