All MOSFET. NTB004N10G Datasheet

 

NTB004N10G Datasheet and Replacement


   Type Designator: NTB004N10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 201 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64.5 nS
   Cossⓘ - Output Capacitance: 1170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: D2PAK
 

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NTB004N10G Datasheet (PDF)

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NTB004N10G

MOSFET Power,N-Channel100 V, 201 A, 4.2 mWNTB004N10GFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX Wide SOAV(BR)DSS RDS(ON) MAX (Note 1) These Devices are Pb-Free and are RoHS Compliant100 V 4.2 mW @ 10 V 201 AApplications Hot Swap in 48 V SystemsN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)Parameter Sy

Datasheet: FQD3N60CTM-WS , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , NCV8403B , NID9N05BCL , MMIS60R580P , NTB095N65S3HF , NTB110N65S3HF , NTB150N65S3HF , NTB190N65S3HF , NTBG020N120SC1 , NTBG040N120SC1 , NTBG060N090SC1 , NTBG160N120SC1 .

History: P50NF06 | IRLML0030PBF-1 | PZ5S6EA | WMM15N80M3 | AP9T18GH-HF | IRF7750 | IRF6723M2D

Keywords - NTB004N10G MOSFET datasheet

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