NTB004N10G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB004N10G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 340 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 201 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 175 nC
trⓘ - Rise Time: 64.5 nS
Cossⓘ - Output Capacitance: 1170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: D2PAK
NTB004N10G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB004N10G Datasheet (PDF)
..1. Size:220K onsemi
ntb004n10g.pdf
ntb004n10g.pdf
MOSFET Power,N-Channel100 V, 201 A, 4.2 mWNTB004N10GFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX Wide SOAV(BR)DSS RDS(ON) MAX (Note 1) These Devices are Pb-Free and are RoHS Compliant100 V 4.2 mW @ 10 V 201 AApplications Hot Swap in 48 V SystemsN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)Parameter Sy
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