NTB004N10G Specs and Replacement

Type Designator: NTB004N10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 201 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64.5 nS

Cossⓘ - Output Capacitance: 1170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: D2PAK

NTB004N10G substitution

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NTB004N10G datasheet

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NTB004N10G

MOSFET Power, N-Channel 100 V, 201 A, 4.2 mW NTB004N10G Features www.onsemi.com Low RDS(on) High Current Capability ID MAX Wide SOA V(BR)DSS RDS(ON) MAX (Note 1) These Devices are Pb-Free and are RoHS Compliant 100 V 4.2 mW @ 10 V 201 A Applications Hot Swap in 48 V Systems N-Channel D MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) Parameter Sy... See More ⇒

Detailed specifications: FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, NID9N05BCL, 7N60, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1, NTBG160N120SC1

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