NTB110N65S3HF MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB110N65S3HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 52 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: D2PAK
NTB110N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB110N65S3HF Datasheet (PDF)
ntb110n65s3hf.pdf
NTB110N65S3HFMOSFET NChannel,SUPERFET III, FRFET650 V, 30 A, 110 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON) MAX ID
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STB21NM50N
