NTB190N65S3HF Specs and Replacement

Type Designator: NTB190N65S3HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: D2PAK

NTB190N65S3HF substitution

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NTB190N65S3HF datasheet

 ..1. Size:392K  onsemi
 ntb190n65s3hf.pdf pdf_icon

NTB190N65S3HF

MOSFET N Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTB190N65S3HF Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON) MAX ID... See More ⇒

Detailed specifications: HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, NID9N05BCL, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, IRLB3034, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1, NTBG160N120SC1, NTBGS4D1N15MC, NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC

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