All MOSFET. NTB190N65S3HF Datasheet

 

NTB190N65S3HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB190N65S3HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 162 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 34 nC
   Rise Time (tr): 19 nS
   Drain-Source Capacitance (Cd): 30 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
   Package: D2PAK

 NTB190N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB190N65S3HF Datasheet (PDF)

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 ntb190n65s3hf.pdf

NTB190N65S3HF NTB190N65S3HF

MOSFET NChannel,SUPERFET III, FRFET650 V, 20 A, 190 mWNTB190N65S3HFDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON) MAX ID

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