NTBG160N120SC1 Specs and Replacement

Type Designator: NTBG160N120SC1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 19.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 50.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm

Package: D2PAK-7L

NTBG160N120SC1 substitution

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NTBG160N120SC1 datasheet

 ..1. Size:331K  onsemi
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NTBG160N120SC1

MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 mW, 19.5 A NTBG160N120SC1 www.onsemi.com Features Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (typ. Coss = 50.7 pF) 1200 V 224 mW @ 20 V 19.5 A 100% Avalanche Tested TJ = 175 C Drain (TAB) This Device is Pb-Fr... See More ⇒

Detailed specifications: NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1, K2611, NTBGS4D1N15MC, NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7

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