NTBGS6D5N15MC MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBGS6D5N15MC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 238 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 121 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: D2PAK-7L
NTBGS6D5N15MC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBGS6D5N15MC Datasheet (PDF)
ntbgs6d5n15mc.pdf
MOSFET - Power, SingleN-Channel, D2PAK7150 V, 7 mW, 121 ANTBGS6D5N15MCFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS150 V 7 mW @ 10 V 121 ACompliant8.7 mW @ 8 VTypical Applic
ntbgs4d1n15mc.pdf
MOSFET - Single N-Channel150 V, 4.1 mW, 185 ANTBGS4D1N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant V(BR)DSS RDS(ON) MAX ID MAX4.1 mW @ 10 VTypical Applications150 V 185 A Power Tools, B
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