NTBGS6D5N15MC Specs and Replacement

Type Designator: NTBGS6D5N15MC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 121 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 57 nC

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 1370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: D2PAK-7L

NTBGS6D5N15MC substitution

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NTBGS6D5N15MC datasheet

 ..1. Size:404K  onsemi
 ntbgs6d5n15mc.pdf pdf_icon

NTBGS6D5N15MC

MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mW, 121 A NTBGS6D5N15MC Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 150 V 7 mW @ 10 V 121 A Compliant 8.7 mW @ 8 V Typical Applic... See More ⇒

 9.1. Size:297K  onsemi
 ntbgs4d1n15mc.pdf pdf_icon

NTBGS6D5N15MC

MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NTBGS4D1N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.1 mW @ 10 V Typical Applications 150 V 185 A Power Tools, B... See More ⇒

Detailed specifications: NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1, NTBG160N120SC1, NTBGS4D1N15MC, RU7088R, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7, NTBS9D0N10MC, NTBV5605

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