NTBLS4D0N15MC
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBLS4D0N15MC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 316
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 187
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 90.4
nC
trⓘ - Rise Time: 115
nS
Cossⓘ -
Output Capacitance: 2055
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package: MO-299A
NTBLS4D0N15MC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBLS4D0N15MC
Datasheet (PDF)
..1. Size:415K onsemi
ntbls4d0n15mc.pdf
MOSFET Single N-Channel150 V, 4.4 mW, 187 ANTBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187 ATypical Applications4.9 mW @ 8 V
9.1. Size:454K onsemi
ntbls1d5n08mc.pdf
MOSFET - Power, SingleN-Channel, TOLLNTBLS1D5N08MC80 V, 1.53 mW, 298 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.53 mW @ 10 VCompliant80 V 298 A3.7 mW @ 6 VApplication
9.2. Size:395K onsemi
ntbls001n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANTBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.9 mW @ 10 VCompliant60 V422 A1.4 mW @ 6 VApplications
9.3. Size:397K onsemi
ntbls0d7n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANTBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.75 mW @ 10 VCompliant60 V470 A1.2 mW @ 6 VTypical App
9.4. Size:385K onsemi
ntbls002n08mc.pdf
NTBLS002N08MCMOSFET - Power, SingleN-Channel, TOLL80 V, 2 mW, 238 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2 mW @ 10 V80 V 238 ATypical Applications5 mW @ 6
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