NTBLS4D0N15MC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTBLS4D0N15MC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 316 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 187 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 90.4 nC
trⓘ - Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 2055 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0044 Ohm
Тип корпуса: MO-299A
Аналог (замена) для NTBLS4D0N15MC
NTBLS4D0N15MC Datasheet (PDF)
ntbls4d0n15mc.pdf
MOSFET Single N-Channel150 V, 4.4 mW, 187 ANTBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187 ATypical Applications4.9 mW @ 8 V
ntbls1d5n08mc.pdf
MOSFET - Power, SingleN-Channel, TOLLNTBLS1D5N08MC80 V, 1.53 mW, 298 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.53 mW @ 10 VCompliant80 V 298 A3.7 mW @ 6 VApplication
ntbls001n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANTBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.9 mW @ 10 VCompliant60 V422 A1.4 mW @ 6 VApplications
ntbls0d7n06c.pdf
MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANTBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS0.75 mW @ 10 VCompliant60 V470 A1.2 mW @ 6 VTypical App
ntbls002n08mc.pdf
NTBLS002N08MCMOSFET - Power, SingleN-Channel, TOLL80 V, 2 mW, 238 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2 mW @ 10 V80 V 238 ATypical Applications5 mW @ 6
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918