NTBS9D0N10MC Specs and Replacement

Type Designator: NTBS9D0N10MC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 935 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: D2PAK

NTBS9D0N10MC substitution

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NTBS9D0N10MC datasheet

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NTBS9D0N10MC

MOSFET - Single N-Channel 100 V, 9.0 mW, 60 A NTBS9D0N10MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 100 V 9.0 mW @ 10 V 60 A Typical Applications Power Tools, Batt... See More ⇒

Detailed specifications: NTBGS4D1N15MC, NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7, IRF730, NTBV5605, NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.