All MOSFET. NTBS9D0N10MC Datasheet

 

NTBS9D0N10MC Datasheet and Replacement


   Type Designator: NTBS9D0N10MC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 935 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: D2PAK
 

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NTBS9D0N10MC Datasheet (PDF)

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NTBS9D0N10MC

MOSFET - Single N-Channel100 V, 9.0 mW, 60 ANTBS9D0N10MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX100 V 9.0 mW @ 10 V 60 ATypical Applications Power Tools, Batt

Datasheet: NTBGS4D1N15MC , NTBGS6D5N15MC , NTBLS001N06C , NTBLS002N08MC , NTBLS0D7N06C , NTBLS1D5N08MC , NTBLS4D0N15MC , NTBS2D7N06M7 , BS170 , NTBV5605 , NTD360N80S3Z , NTD4979N , NTD5C446N , NTD5C668NL , NTDV18N06L , NTH027N65S3F , NTH4L020N120SC1 .

History: KI2310DS | VN1206N1 | IXCY01N90E | IPD60R3K4CE | SSF1109 | WML26N60C4

Keywords - NTBS9D0N10MC MOSFET datasheet

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