NTBS9D0N10MC MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBS9D0N10MC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 935 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: D2PAK
NTBS9D0N10MC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBS9D0N10MC Datasheet (PDF)
ntbs9d0n10mc.pdf
MOSFET - Single N-Channel100 V, 9.0 mW, 60 ANTBS9D0N10MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX100 V 9.0 mW @ 10 V 60 ATypical Applications Power Tools, Batt
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