All MOSFET. NTBV5605 Datasheet

 

NTBV5605 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTBV5605
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 18.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: D2PAK

 NTBV5605 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTBV5605 Datasheet (PDF)

 ..1. Size:138K  onsemi
 ntb5605p ntbv5605.pdf

NTBV5605 NTBV5605

NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo

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