NTBV5605 Specs and Replacement

Type Designator: NTBV5605

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 122 nS

Cossⓘ - Output Capacitance: 211 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: D2PAK

NTBV5605 substitution

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NTBV5605 datasheet

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ntb5605p ntbv5605.pdf pdf_icon

NTBV5605

NTB5605P, NTBV5605 Power MOSFET -60 V, -18.5 A P-Channel, D2PAK http //onsemi.com Features Designed for Low RDS(on) V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605 -60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS Compliant P-Channel Applications D Power Supplies PWM Mo... See More ⇒

Detailed specifications: NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7, NTBS9D0N10MC, IRFZ44N, NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.