All MOSFET. NTBV5605 Datasheet

 

NTBV5605 Datasheet and Replacement


   Type Designator: NTBV5605
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: D2PAK
 

 NTBV5605 substitution

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NTBV5605 Datasheet (PDF)

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NTBV5605

NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo

Datasheet: NTBGS6D5N15MC , NTBLS001N06C , NTBLS002N08MC , NTBLS0D7N06C , NTBLS1D5N08MC , NTBLS4D0N15MC , NTBS2D7N06M7 , NTBS9D0N10MC , IRFZ44N , NTD360N80S3Z , NTD4979N , NTD5C446N , NTD5C668NL , NTDV18N06L , NTH027N65S3F , NTH4L020N120SC1 , NTH4L027N65S3F .

History: NTBS9D0N10MC | FQNL1N50BBU

Keywords - NTBV5605 MOSFET datasheet

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