NTBV5605 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBV5605
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 18.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 122 nS
Cossⓘ - Output Capacitance: 211 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: D2PAK
NTBV5605 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBV5605 Datasheet (PDF)
ntb5605p ntbv5605.pdf
NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BUZ64
History: BUZ64
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918