NTD5C668NL Datasheet. Specs and Replacement

Type Designator: NTD5C668NL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: DPAK

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NTD5C668NL datasheet

 ..1. Size:132K  onsemi
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NTD5C668NL

NTD5C668NL Power MOSFET 60 V, 8.9 mW, 48 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 8.9 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V 49 A 12.8 mW @ 4.5 V Parameter S... See More ⇒

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NTD5C668NL

NTD5C446N Power MOSFET 40 V, 3.5 mW, 110 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 3.5 mW @ 10 V 110 A Parameter Symbol Value Unit ... See More ⇒

Detailed specifications: NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7, NTBS9D0N10MC, NTBV5605, NTD360N80S3Z, NTD4979N, NTD5C446N, 20N60, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F, NTH4L040N120SC1, NTH4L040N65S3F, NTH4L080N120SC1, NTH4L160N120SC1

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